Photocurrent And Noise Analysis as Alternative Approaches to Understanding OFET Behavior

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Date/Time:Thursday, 29 Mar 2012 - Thursday, 29 Mar 2012
Location:PHYSICS Room 5
Phone:515-294-5630
Channel:Condensed Matter Physics
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Ioannis (John) Kymissis
Electrical Engineering
Columbia University

The characterization of organic field effect transistors is
complicated by the influence of the contacts on channel behavior and
the trap limited conduction mechanism which governs device
performance.

In this presentation, several strategies for probing OFETs will be
discussed. In particular, the use of spectrally resolved photocurrent
spectroscopy will be demonstrated as a strategy for the analysis of
trap states in the device, spatially resolved photocurrent will be
presented as an approach for measuring internal device potential, and
noise spectroscopy will be presented as an approach to evaluating the
effect of trap states on channel conduction. These probes provide
additional pathways for analyzing OFET device and material behavior
with different complicating parasitics than incumbent characterization
approaches.

The applications of OFETs, including their utility in instrumenting
electroactive polymers, will also be discussed.